tip120, 121, 122, 125, 126, 127 darlington transistors page 1 30/05/05 v1.0 features: ? ? designed for general-purpose amplifier and low speed switching applications. ? ? collector-emitter sustaining voltage-v ceo(sus) = 60v (minimum) - tip120, TIP125 80v (minimum) - tip121, tip126 100v (minimum) - tip122, tip127. ? ? collector-emitter saturation voltage-v ce(sat) = 2.0v (maximum) at i c = 3.0a. ? ? monolithic construction with built-in-base-emitter shunt resistors. minimum maximum a 14.68 15.31 b 9.78 10.42 c 5.01 6.52 d 13.06 14.62 e 3.57 4.07 f 2.42 3.66 g 1.12 1.36 h 0.72 0.96 i 4.22 4.98 j 1.14 1.38 k 2.20 2.97 l 0.33 0.55 m 2.48 2.98 o 3.70 3.90 dimensions : millimetres maximum ratings characteristic symbol tip120 tip121 tip122 unit TIP125 tip126 tip127 collector-emitter voltage v ceo 60 80 100 v collector-base voltage v cbo emitter-base voltage v ebo 5.0 collector current -continuous -peak i c i cm 5.0 8.0 a base current i b 120 ma total power dissipation at t c = 25c derate above 25c p d 65 0.52 w w/c operating and storage junction temperature range t j , t stg -65 to +150 c thermal characteristics characteristic symbol maximum unit thermal resistance junction to case r jc 1.92 c/w pin 1. base 2. collector 3. emitter 4. collector (case) npn pnp tip120 tip 125 tip121 tip 126 tip122 tip 127 5.0 ampere darlington complementary silicon power transistors 60 - 100 volts 65 watts to-220
tip120, 121, 122, 125, 126, 127 darlington transistors page 2 30/05/05 v1.0 characteristic symbol minimum maximum unit off characteristics collector-emitter sustaining voltage (1) (i c = 30ma, i b = 0) tip120, TIP125 tip121, tip126 tip122, tip127 v ceo(sus) 60 80 100 - v collector cut off current (v ce = 30v, i b = 0) tip120, TIP125 (v ce = 40v, i b = 0) tip121, tip126 (v ce = 50v, i b = 0) tip122, tip127 i ceo - 0.5 0.5 0.5 ma collector cut off current (v cb = 60v, i b = 0) tip120, TIP125 (v cb = 80v, i b = 0) tip121, tip126 (v cb = 100v, i b = 0) tip122, tip127 i cbo - 0.2 0.2 0.2 collector cut off current (v eb =5.0v, i c = 0) i ebo - 2.0 on characteristics (1) dc current gain (i c = 0.5a, v ce = 3.0v) (i c = 3.0a, v ce = 3.0v) h fe 1000 1000 - - collector-emitter saturation voltage (i c = 3.0a, i b = 12ma) (i c = 5.0a, i b = 20ma) v ce(sat) - 2.0 4.0 v base-emitter on voltage (i c = 3.0a, v ce = 3.0v) v be(on) - 2.5 dynamic characteristics small-signal current gain (i c = 3.0a, v ce = 4.0v, f = 1.0mhz) h fe 4.0 - - output capacitance (v cb = 10v, i e = 0, f = 0.1mhz) tip120, tip121, tip122 TIP125, tip126, tip127 c ob - 300 250 pf electrical characteristics (t c = 25c unless otherwise noted) (1) pulse test : pulse width = 300 s, duty cycle 2.0% figure-1 power derating
tip120, 121, 122, 125, 126, 127 darlington transistors page 3 30/05/05 v1.0 figure - 2 switching time figure - 3 switching time figure - 4 small signal current gain figure - 5 capacitances
tip120, 121, 122, 125, 126, 127 darlington transistors page 4 30/05/05 v1.0 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate i c- v ce limits of the transistor that must not be subjected to greater dissipation than the curves indicate. the data of figure - 6 is based on t j(pk) = 150c;t c is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% provided t j (pk) 150c, at high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure - 7 dc current gain figure - 8 collector saturation region figure - 6 active region safe operating area
tip120, 121, 122, 125, 126, 127 darlington transistors page 5 30/05/05 v1.0 i c a v ceo (maximum) v h fe minimum at i c = 3a p tot at 25c w package part number npn pnp 5 60 1000 65 to-220 tip120 TIP125 80 tip121 tip126 100 tip122 tip127 figure - 9 ?on? voltages specifications
|
